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Technical parameters

Key specs

TypePNP
Collector-emitter voltage60 V
Collector current2 AMax
DC current gain10001A
Power2 WMax
Power
Current - Collector Cutoff (Max)2mA
Current - Collector (Ic) (Max)2 A
Power - Max2 W
Voltage - Collector Emitter Breakdown (Max)60 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 1A, 4V
Frequency - Transition-
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBulk
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
Other
Base Product NumberTIP115
Mfronsemi
Product StatusObsolete
Series-
Transistor TypePNP - Darlington
Vce Saturation (Max) @ Ib, Ic2.5V @ 8mA, 2A

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