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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage60 V
Collector current25 AMax
DC current gain4015 A
Power125 WMax · TC = 25°C

Datasheet-verified parameters

17 items
ParameterValue and test conditionsSource
TypeNPN
Collector - Emitter Voltage60 Vdc
Collector Current25 Adc (Continuous), 40 Adc (Peak)
DC Current Gain40 Typ @ 15 A
Total Power Dissipation125 W @ TC = 25°C
PackageTO-247 (Pb-Free), SOT-93 (TO-218) (Pb-Free)
Operating Junction Temperature Range-65 to +150 °C
RoHSPb-Free
Collector - Base Voltage60 Vdc
Emitter - Base Voltage5.0 Vdc
Base Current5.0 Adc (Continuous)
Storage Junction Temperature Range-65 to +150 °C
Unclamped Inductive Load90 mJ
Thermal Resistance, Junction-to-Case1.0 °C/W
Junction-To-Free-Air Thermal Resistance35.7 °C/W
Current Gain Bandwidth Product3.0 min @ IC = 1.0 A, f = 1.0 MHz
Collector-Emitter Leakage Current1.0 mA @ 30 and 60 V
All parameters (17)ExpandCollapse
Power
Current - Collector Cutoff (Max)1mA
Current - Collector (Ic) (Max)25 A
Power - Max125 W
Voltage - Collector Emitter Breakdown (Max)60 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 15A, 4V
Frequency - Transition3MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247-3
Other
Base Product NumberTIP35
Mfronsemi
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic4V @ 5A, 25A

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