TransphormUnited States
GAN FET N-CH 650V TO-220
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage650 V
Continuous drain current16 A
On-resistance180 mΩMax · 8.5A
Gate threshold voltage4.8 VMax · 500μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 83W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 598 pF @ 400 V |
| Mfr | Transphorm |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 8.5A, 10V |
| Series | SuperGaN® |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.8V @ 500µA |
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