MOSFET N-CH 45V 150A 8SOP
沟道N 沟道
耐压45 V
连续漏极电流150 A
导通电阻1.04 mΩ
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沟道N 沟道
耐压45 V
连续漏极电流150 A
导通电阻1.04 mΩ最大 · 50A
阈值电压2.4 V最大 · 1mA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Drain to Source Voltage (Vdss) | 45 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 960mW (Ta), 170W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-SOP Advance (5x5) |
| 其他 | |
| Base Product Number | TPH1R005 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 99 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9600 pF @ 22.5 V |
| Mfr | Toshiba Semiconductor and Storage |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 1.04mOhm @ 50A, 10V |
| Series | U-MOSIX-H |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
技术资料
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