MOSFET N-CH 30V 88A 8SOP
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current88 A
On-resistance4.2 mΩMax · 44A
Gate threshold voltage2.1 VMax · 300μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 90W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Other | |
| Base Product Number | TPH3R003 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3825 pF @ 15 V |
| Mfr | Toshiba Semiconductor and Storage |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 44A, 4.5V |
| Series | U-MOSIX-H |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.1V @ 300µA |
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