Taiwan Semiconductor CorporationTaiwan, China
MOSFET N-CH 60V 10A/51A 8PDFN
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current10 ~ 51 A
On-resistance13 mΩMax · 10A
Gate threshold voltage2.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 51A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 3.1W (Ta), 83W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-PowerLDFN |
| Supplier Device Package | 8-PDFN (5.2x5.75) |
| Other | |
| Base Product Number | TSM130 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2175 pF @ 30 V |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 10A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
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