Taiwan Semiconductor CorporationTaiwan, China
30V, 9A, SINGLE N-CHANNEL POWER
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current9 A
On-resistance18 mΩMax · 8A
Gate threshold voltage2 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 2.5W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
| Other | |
| Base Product Number | TSM180 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 345 pF @ 25 V |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 8A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |