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技术参数

电源
Current - Continuous Drain (Id) @ 25°C5.9A (Ta)
Drain to Source Voltage (Vdss)30V
Power - Max3W (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP
其他
Base Product NumberTSM4936
Configuration2 N-Channel
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds610pF @ 15V
MfrTaiwan Semiconductor Corporation
Product StatusActive
Rds On (Max) @ Id, Vgs36mOhm @ 5.9A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

技术资料