800V, 5.5A, SINGLE N-CHANNEL POW
沟道N 沟道
耐压800 V
连续漏极电流5.5 A
导通电阻1.2 Ω
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沟道N 沟道
耐压800 V
连续漏极电流5.5 A
导通电阻1.2 Ω最大 · 1.8A
阈值电压4 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 110W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | - |
| Supplier Device Package | I2PAK |
| 其他 | |
| Base Product Number | TSM80 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 685 pF @ 100 V |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 1.8A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |