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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C15A (Tc), 13A (Tc)
Drain to Source Voltage (Vdss)30V
Power - Max6W
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP
Other
Base Product NumberTSM8568
ConfigurationN and P-Channel
FET Feature-
Gate Charge (Qg) (Max) @ Vgs7nC @ 4.5V, 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds646pF @ 15V, 1089pF @ 15V
MfrTaiwan Semiconductor Corporation
Product StatusActive
Rds On (Max) @ Id, Vgs16mOhm @ 8A, 10V, 24mOhm @ 7A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

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