Microchip TechnologyUnited States

UES802E3

ActiveSingle Diodes

DIODE GEN PURP 100V 70A DO5

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Technical parameters

Key specs

Reverse voltage100 V
Average rectified current70 A
Forward voltage975 mVMax · 70 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
Power
Current - Average Rectified (Io)70A
Current - Reverse Leakage @ Vr25 µA @ 100 V
Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If975 mV @ 70 A
Environment and package
Mounting TypeStud Mount
Operating Temperature - Junction175°C
PackageBulk
Package / CaseDO-203AB, DO-5, Stud
Supplier Device PackageDO-5
Other
Capacitance @ Vr, F-
MfrMicrochip Technology
Product StatusActive
Reverse Recovery Time (trr)50 ns
Series-
SpeedFast Recovery =< 500ns, > 200mA (Io)
TechnologyStandard

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