QorvoUnited States
750V/11MOHM, SIC, STACKED CASCOD
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage750 V
Continuous drain current104 A
On-resistance14.2 mΩMax · 60A
Gate threshold voltage5.5 VMax · 10mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 104A (Tc) |
| Drain to Source Voltage (Vdss) | 750 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Power Dissipation (Max) | 357W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-4 |
| Supplier Device Package | TO-247-4 |
| Other | |
| Base Product Number | UJ4SC075 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3245 pF @ 400 V |
| Mfr | Qorvo |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 14.2mOhm @ 60A, 12V |
| Series | - |
| Technology | SiCFET (Cascode SiCJFET) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 5.5V @ 10mA |