Microchip TechnologyUnited States
DIODE GEN PURP 300V 1A A AXIAL
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View full reportTechnical parameters
Key specs
Reverse voltage300 V
Average rectified current1 A
Forward voltage1.1 VMax · 500 mA
TypeStandardFast Recovery =< 500ns,> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 3 µA @ 300 V |
| Voltage - DC Reverse (Vr) (Max) | 300 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 500 mA |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Package | Bulk |
| Package / Case | A, Axial |
| Supplier Device Package | A, Axial |
| Other | |
| Capacitance @ Vr, F | 70pF @ 0V, 1MHz |
| Mfr | Microchip Technology |
| Product Status | Active |
| Reverse Recovery Time (trr) | 300 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |
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