IXYSUnited States
MOSFET 2N-CH 100V 680A Y3-LI
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 680A |
| Drain to Source Voltage (Vdss) | 100V |
| Power - Max | - |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package | Box |
| Package / Case | Y3-Li |
| Supplier Device Package | Y3-Li |
| Other | |
| Base Product Number | VMM650 |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Gate Charge (Qg) (Max) @ Vgs | 1440nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Mfr | IXYS |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 500A, 10V |
| Series | HiPerFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 30mA |