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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage60 V
Continuous drain current150 mA
On-resistance7.5 ΩMax · 500mA
Gate threshold voltage2.5 VMax · 1mA
Power
Current - Continuous Drain (Id) @ 25°C150mA (Ta)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)400mW (Ta)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device PackageTO-92 (TO-226)
Other
Base Product NumberVN2222
FET Feature-
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 25 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs7.5Ohm @ 500mA, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

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