Vishay SiliconixUnited States
MOSFET P-CH 80V 880MA TO39
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage80 V
Continuous drain current880 mA
On-resistance5 ΩMax · 1A
Gate threshold voltage4.5 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 880mA (Ta) |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 6.25W (Ta) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
| Other | |
| Base Product Number | VP0808 |
| FET Feature | - |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V |
| Mfr | Vishay Siliconix |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 1A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
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