类型DRAM
容量512 Mbit
接口并口
供电电压1.7 ~ 1.95 V
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类型DRAM
容量512 Mbit
接口并口
供电电压1.7 ~ 1.95 V
时钟频率200 MHz最大
| 电源 | |
|---|---|
| Voltage - Supply | 1.7V ~ 1.95V |
| 交流 / 直流特性 | |
| Clock Frequency | 200 MHz |
| 环境与封装 | |
| Memory Size | 512Mbit |
| Mounting Type | Surface Mount |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Package | Tray |
| Package / Case | 90-TFBGA |
| Supplier Device Package | 90-VFBGA (8x13) |
| 其他 | |
| Access Time | 5 ns |
| Base Product Number | W949D2 |
| DigiKey Programmable | Not Verified |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Memory Organization | 16M x 32 |
| Memory Type | Volatile |
| Mfr | Winbond Electronics |
| Product Status | Active |
| Series | - |
| Technology | SDRAM - Mobile LPDDR |
| Write Cycle Time - Word, Page | 15ns |
器件图片
技术资料
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