类型DRAM
容量1 Gbit
接口并口
供电电压1.7 ~ 1.9 V
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类型DRAM
容量1 Gbit
接口并口
供电电压1.7 ~ 1.9 V
时钟频率200 MHz最大
| 电源 | |
|---|---|
| Voltage - Supply | 1.7V ~ 1.9V |
| 交流 / 直流特性 | |
| Clock Frequency | 200 MHz |
| 环境与封装 | |
| Memory Size | 1Gbit |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Package | Tray |
| Package / Case | 84-TFBGA |
| Supplier Device Package | 84-WBGA (8x12.5) |
| 其他 | |
| Access Time | 57.5 ns |
| Base Product Number | W971GG6 |
| DigiKey Programmable | Not Verified |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Memory Organization | 64M x 16 |
| Memory Type | Volatile |
| Mfr | Winbond Electronics |
| Product Status | Obsolete |
| Series | - |
| Technology | SDRAM - DDR2 |
| Write Cycle Time - Word, Page | 15ns |