WeEn SemiconductorsNetherlands
WNB2560M/GBJ/STANDARD MARKING *
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View full reportTechnical parameters
Key specs
Reverse voltage600 V
Average rectified current25 A
Forward voltage920 mVMax · 12.5 A
TypeStandard
| Power | |
|---|---|
| Current - Average Rectified (Io) | 25 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Voltage - Forward (Vf) (Max) @ If | 920 mV @ 12.5 A |
| Voltage - Peak Reverse (Max) | 600 V |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Package | Bulk |
| Package / Case | 4-SIP, GBJ |
| Supplier Device Package | GBJS |
| Other | |
| Base Product Number | WNB2560 |
| Diode Type | Single Phase |
| Mfr | WeEn Semiconductors |
| Product Status | Active |
| Series | - |
| Technology | Standard |