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Technical parameters

Power
Current - Average Rectified (Io) (per Diode)20A
Current - Reverse Leakage @ Vr50 µA @ 650 V
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 10 A
Environment and package
Mounting TypeThrough Hole
Operating Temperature - Junction175°C
PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247-3
Other
Base Product NumberWNSC2
Diode Configuration1 Pair Common Cathode
MfrWeEn Semiconductors
Product StatusActive
Reverse Recovery Time (trr)0 ns
Series-
SpeedNo Recovery Time > 500mA (Io)
TechnologySiC (Silicon Carbide) Schottky

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