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Technical parameters

Power
Current - Average Rectified (Io) (per Diode)40A
Current - Reverse Leakage @ Vr200 µA @ 1200 V
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.8 V @ 20 A
Environment and package
Mounting TypeThrough Hole
Operating Temperature - Junction175°C
PackageTape & Reel (TR)
Package / CaseTO-247-3
Supplier Device PackageTO-247-3
Other
Base Product NumberWNSC2
Diode Configuration1 Pair Common Cathode
MfrWeEn Semiconductors
Product StatusDiscontinued at Digi-Key
Reverse Recovery Time (trr)0 ns
Series-
SpeedNo Recovery Time > 500mA (Io)
TechnologySiC (Silicon Carbide) Schottky

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