WeEn SemiconductorsNetherlands
WNSCM80120R/TO247-4L/STANDARD MA
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage1.2 kV
Continuous drain current45 A
On-resistance98 mΩMax · 20A
Gate threshold voltage4.5 VMax · 6mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 45A (Ta) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Power Dissipation (Max) | 270W (Ta) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Package / Case | TO-247-4 |
| Supplier Device Package | TO-247-4L |
| Other | |
| Base Product Number | WNSCM80120 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 1000 V |
| Mfr | WeEn Semiconductors |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 20A, 20V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | +25V, -10V |
| Vgs(th) (Max) @ Id | 4.5V @ 6mA |
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