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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage100 V
Collector current4 AMax
DC current gain1002A
Power1.2 WMax
Power
Current - Collector Cutoff (Max)50nA (ICBO)
Current - Collector (Ic) (Max)4 A
Power - Max1.2 W
Voltage - Collector Emitter Breakdown (Max)100 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 2A, 2V
Frequency - Transition130MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 200°C (TJ)
PackageBulk
Package / CaseE-Line-3
Supplier Device PackageE-Line (TO-92 compatible)
Other
Base Product NumberZTX853
MfrDiodes Incorporated
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic200mV @ 400mA, 4A

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