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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage300 V
Collector current3 AMax
DC current gain100500mA
Power1.2 WMax
Power
Current - Collector Cutoff (Max)50nA (ICBO)
Current - Collector (Ic) (Max)3 A
Power - Max1.2 W
Voltage - Collector Emitter Breakdown (Max)300 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA, 10V
Frequency - Transition80MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 200°C (TJ)
PackageTape & Reel (TR)
Package / CaseE-Line-3
Supplier Device PackageE-Line (TO-92 compatible)
Other
Base Product NumberZTX857
MfrDiodes Incorporated
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic250mV @ 600mA, 3A

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