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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage450 V
Continuous drain current45 mA
On-resistance150 ΩMax · 50mA
Gate threshold voltage4.5 VMax · 1mA
Power
Current - Continuous Drain (Id) @ 25°C45mA (Ta)
Drain to Source Voltage (Vdss)450 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)700mW (Ta)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Box (TB)
Package / CaseE-Line-3
Supplier Device PackageE-Line (TO-92 compatible)
Other
Base Product NumberZVP0545
FET Feature-
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds120 pF @ 25 V
MfrDiodes Incorporated
Product StatusActive
Rds On (Max) @ Id, Vgs150Ohm @ 50mA, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 1mA

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