Diodes IncorporatedUnited States
MOSFET P-CH 35V 3.3A/12A TO220-3
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage35 V
Continuous drain current3.3 ~ 12 A
On-resistance75 mΩMax · 2.4A
Gate threshold voltage1 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta), 12A (Tc) |
| Drain to Source Voltage (Vdss) | 35 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 1.5W (Ta), 20W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220-3 |
| Other | |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 825 pF @ 25 V |
| Mfr | Diodes Incorporated |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 2.4A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |