Results forRFD3055
27 partsProduct search results27 total
- RFD3055
Single FETs, MOSFETs
MOSFET N-CH 60V 12A IPAK
- RFD3055
Transistors - FETs, MOSFETs - Single
MOSFET N-CH 60V 12A IPAK
- RFD3055
Transistors - FETs, MOSFETs - Single
MOSFET N-CH 60V 12A IPAK
- RFD3055
Transistors - FETs, MOSFETs - Single
- RFD3055LE
Single FETs, MOSFETs
MOSFET N-CH 60V 11A IPAK
- RFD3055LE
Transistors - FETs, MOSFETs - Single
MOSFET N-CH 60V 11A IPAK
- RFD3055SM
Transistors - FETs, MOSFETs - Single
MOSFET N-CH 60V 12A TO252AA
- RFD3055LESM
Transistors - FETs, MOSFETs - Single
MOSFET N-CH 60V 11A TO252AA
- RFD3055SM9A
Single FETs, MOSFETs
MOSFET N-CH 60V 12A TO252AA
- RFD3055SM9A
Transistors - FETs, MOSFETs - Single
MOSFET N-CH 60V 12A TO252AA
- RFD3055LESM
Single FETs, MOSFETs
MOSFET N-CH 60V 11A TO252AA
- RFD3055LESM
Transistors - FETs, MOSFETs - Single
MOSFET N-CH 60V 11A TO252AA
- RFD3055LESM
Single FETs, MOSFETs
【联系：sales@hxymos.com】这款N沟道场效应管专为中功率应用设计，其漏源击穿电压为60V，能够稳定处理8A的连续负载电流。在导通特性上，该器件表现出88mΩ的电阻值，配合±20V的栅源电压耐受范围，使其在电路设计中具备良好的驱动兼容性。 该器件常见于各类电源转换模块，负责高效的电能切换与传输；在直流电机控制系统中，它能够精准响应PWM信号，实现对转速的平稳调节；此外，在电池供电的便携式设备中，它常被用于电源路径管理，确保能量在不同回路间安全流转。
- RFD3055SM9A
Transistors - FETs, MOSFETs - Single
MOSFET N-CH 60V 12A TO252AA
- RFD3055LE-VB
Transistors - FETs, MOSFETs - Single
台积电流片，长电科技封装；是一款单通道N沟道场效应晶体管，采用Trench工艺，具有较大的电压容忍度，可提供良好的电路灵活性。适用于电源模块、电机驱动模块、工业控制模块和电源管理模块等领域。TO251；N—Channel沟道,60V；35A；RDS(ON)=32mΩ@VGS=10V,VGS=20V；Vth=2~3.5V；
- RFD3055LESM9A
Single FETs, MOSFETs
MOSFET N-CH 60V 11A TO252AA
- RFD3055LESM9A
Transistors - FETs, MOSFETs - Single
MOSFET N-CH 60V 11A TO252AA
- RFD3055LESM9A
Transistors - FETs, MOSFETs - Single
MOSFET N-CH 60V 11A TO252AA
- RFD3055RLESM9A
Transistors - FETs, MOSFETs - Arrays
12A, 60V, 0.15OHM, N-CHANNEL,
- RFD3055RLESM9A
Transistors - FETs, MOSFETs - Single
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