BORN(伯恩半导体)Китай
Все аналоги
Полный отчётТехнические параметры
| CH | 4 |
| GBP (MHz) | 11 |
| Iq (μA) | 3120 |
| Rail-to-Rail Input | Yes |
| Rail-to-Rail Output | Yes |
| SR (V/μS) | 11.5 |
| Vcc (V) | 1.8~5.5 |
| Vos max (mV) | 3 |
| Vos TC (uV/℃) | 1 |
| CH | 4 |
| GBP (MHz) | 11 |
| Iq (μA) | 3120 |
| Rail-to-Rail Input | Yes |
| Rail-to-Rail Output | Yes |
| SR (V/μS) | 11.5 |
| Vcc (V) | 1.8~5.5 |
| Vos max (mV) | 3 |
| Vos TC (uV/℃) | 1 |