SHINDENGEN(新电元)Япония
This diode uses a barrier that is formed with a metal-semiconductor junction. Compared to the one using a P-N junction, the forward rise voltage is lower and the switching speed is extremely high, making it the most suitable rectifier for high speed low V F diodes. S series：Balanced V F and I R M series：Balanced I R and Low V F N series：High Voltage H series：Ultra Low V F J series：Low I R SL series：Ultra Low I R , Tj = 175℃ guaranteed Y series：Balanced low I R
Все аналоги
Полный отчётТехнические параметры
Основные параметры
Обратное напряжение60 V
Средний выпрямленный ток360 A
| Питание | |
|---|---|
| Average forward current | 360 |
| Forward voltage | 0.67 |
| Repetitive peak reverse voltage | 60 |
| Repetitive peak surge reverse voltage | 65 |
| Reverse current | 80 |
| Surge forward current | 1600 |
| Условия эксплуатации и корпус | |
| Junction temperature | 125 |
| Mounting torque | 1.7 |
| Package (House Name) | Module |
| Storage temperrature | -40 to 125 |
| Temperrature1 | Tc |
| Temperrature2 | Tc |
| Thermal resistance | 0.18 |
| Другое | |
| As | USE |
| Br | USE |
| Conditions | Junction to case |
| Ctrl Number | D360SC6M_Rev.01(2020.01) |
| Diag01 | D360SC6M_01_VF.jpg |
| Diag02 | D360SC6M_02_PF.jpg |
| Diag03 | D360SC6M_03_IFSM.jpg |
| Diag04 | D360SC6M_04_IR.jpg |
| Diag05 | D360SC6M_05_PR.jpg |
| Diag06 | D360SC6M_06_Cj.jpg |
| Diag07 | D360SC6M_07_DC.jpg |
| Evidence | J533_D360SC6M.pdf |
| I F (AV) | 360A |
| I FSM | 1600A |
| Ni | USE |
| Order Quantity | FAQをご確認ください。 |
| Pb | USE |
| Rp | Non-USE |
| Sb | USE |
| Series | S series |
| Spec Code | 4000 |
| Technical ＊＊＊ | TechDoc(Diodes)e.pdf |
| Technical Jp | TechDoc(Diodes)j.pdf |
| Total capacitance | 4400 |
| V F (max.) | 0.67V |
| V RRM | 60V |