SHINDENGEN(新电元)Япония
This diode uses a barrier that is formed with a metal-semiconductor junction. Compared to the one using a P-N junction, the forward rise voltage is lower and the switching speed is extremely high, making it the most suitable rectifier for high speed low V F diodes. S series：Balanced V F and I R M series：Balanced I R and Low V F N series：High Voltage H series：Ultra Low V F J series：Low I R SL series：Ultra Low I R , Tj = 175℃ guaranteed Y series：Balanced low I R
Все аналоги
Полный отчётТехнические параметры
Основные параметры
Обратное напряжение40 V
Средний выпрямленный ток20 A
| Питание | |
|---|---|
| Average forward current | 20 |
| Forward voltage | 0.55 |
| Repetitive peak reverse voltage | 40 |
| Repetitive peak surge reverse power | 330 |
| Repetitive peak surge reverse voltage | 45 |
| Reverse current | 7.5 |
| Surge forward current | 230 |
| Условия эксплуатации и корпус | |
| Junction temperature | 150 |
| Package (House Name) | STO-220 |
| Package (JEITA Code) | SC-83 similar |
| Storage temperrature | -40 to 150 |
| Temperrature1 | Tc |
| Temperrature2 | Tc |
| Thermal resistance | 1.7 |
| Другое | |
| As | USE |
| Br | USE |
| Conditions | Junction to case |
| Ctrl Number | DF20SC4M_Rev.01(2020.01) |
| Diag01 | DF20SC4M_01_VF.jpg |
| Diag02 | DF20SC4M_02_PF.jpg |
| Diag03 | DF20SC4M_03_IFSM.jpg |
| Diag04 | DF20SC4M_04_IR.jpg |
| Diag05 | DF20SC4M_05_PR.jpg |
| Diag06 | DF20SC4M_06_Cj.jpg |
| Diag07 | DF20SC4M_07_DC.jpg |
| Diag08 | DF20SC4M_08_PRRSM.jpg |
| Diag09 | DF20SC4M_09_PRRSM.jpg |
| Evidence | J532_DF20SC4M.pdf |
| I F (AV) | 20A |
| I FSM | 230A |
| Ni | USE |
| Order Quantity | FAQをご確認ください。 |
| Pb | USE |
| Rp | Non-USE |
| Sb | USE |
| Series | S series |
| Spec Code | 7072 |
| Technical ＊＊＊ | TechDoc(Diodes)e.pdf |
| Technical Jp | TechDoc(Diodes)j.pdf |
| Total capacitance | 390 |
| V F (max.) | 0.55V |
| V RRM | 40V |