60V P-Channel Enhancement Mode MOSFET
Все аналоги
Полный отчётТехнические параметры
| Условия эксплуатации и корпус | |
|---|---|
| AEC Qualified | Yes |
| Другое | |
| C ISS Condition @|V DS | (V) | 30 V |
| C ISS Typ (pF) | 1286 pF |
| Compliance (Only Automotive Supports PPAP) | Standard |
| ESD Diodes (Y|N) | No |
| |I DS | @T A = +25°C (A) | 2.8 A |
| |I DS | @T C = +25°C (A) | - A |
| P D @T A = +25°C (W) | 1.7 W |
| P D @T C = +25°C (W) | - W |
| Polarity | P |
| Q G Typ @ |V GS | = 10V (nC) | 23 nC |
| Q G Typ @ |V GS | = 4.5V (nC) | 11 nC |
| R DS(ON) Max@ V GS (10V) (mΩ) | 115 mΩ |
| R DS(ON) Max@ V GS (1.8V) (mΩ) | - mΩ |
| R DS(ON) Max@ V GS (2.5V) (mΩ) | - mΩ |
| R DS(ON) Max@ V GS (4.5V) (mΩ) | 145 mΩ |
| |V DS | (V) | 60 V |
| |V GS(TH) | Max (V) | 3 V |
| |V GS(TH) | Min (V) | 1 V |
| |V GS | (±V) | 20 ±V |