onsemiСША
MOSFET N/P-CH 25V SSOT-6
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Технические параметры
| Питание | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 220mA, 460mA |
| Drain to Source Voltage (Vdss) | 25V |
| Power - Max | 700mW |
| Условия эксплуатации и корпус | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | SuperSOT™-6 |
| Другое | |
| Base Product Number | FDC6322 |
| FET Feature | Logic Level Gate |
| FET Type | N and P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.7nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 10V |
| Mfr | onsemi |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 400mA, 4.5V |
| Series | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |