POWER FIELD-EFFECT TRANSISTOR, 3
Все аналоги
Полный отчётТехнические параметры
| Питание | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.1A |
| Drain to Source Voltage (Vdss) | 100V |
| Power - Max | 1.9W |
| Условия эксплуатации и корпус | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Package / Case | 12-WDFN Exposed Pad |
| Supplier Device Package | 12-MLP (5x4.5) |
| Другое | |
| FET Feature | Standard |
| FET Type | 4 N-Channel (Half Bridge) |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 215pF @ 15V |
| Mfr | Fairchild Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 3A, 10V |
| Series | GreenBridge™ PowerTrench® |
| Vgs(th) (Max) @ Id | 4V @ 250µA |