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FSF10F60B
SHINDENGEN(新电元)Япония

FSF10F60B

ПроизводитсяSingle Diodes

This diode is also a P-N junction element with better reverse recovery characteristics. It is perfectly suited for SMPSes in fields including home electronics as well as those for office appliance apparatuses, and factory automation apparatuses. K series:Low V F ML series:Low V F , Low trr, Soft Recovery Type US series:Ultra Fast, Soft Recovery Type A series:Ultra Fast, Low V F Type

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Полный отчёт

Технические параметры

Основные параметры

Обратное напряжение600 V
Средний выпрямленный ток10 A
Питание
Average forward current10
Forward voltage1.8
Repetitive peak reverse voltage600
Reverse current30
Surge forward current120
Условия эксплуатации и корпус
Junction temperature-55 to 175
Package (House Name)TO-220 Full-Mold
Package (JEDEC Code)TO-220 Full-Mold
Storage temperrature-55 to 175
Thermal resistance4
Другое
AsNot identified
BrNot identified
ConditionsJunction to case
Ctrl NumberFSF10F60B_Rev.01(2026.03)
I F (AV)10A
I FSM120A
NiNot identified
PbNot identified
Reverse recovery time65
RpNot identified
SbNot identified
SeriesTF
V F (max.)1.80V
V RRM600V

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