The HN1C01F is a Toshiba Bipolar Transistors product. NPN + NPN Bipolar Transistor, 50 V, 0.15 A, SOT-26(SM6) General-purpose｜ Find data sheet and product information from the product details page.
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Полный отчётТехнические параметры
| Питание | |
|---|---|
| [Abs] Collector Current (Q1) (I C) | 0.15 A |
| [Abs] Collector Current (Q2) (I C) | 0.15 A |
| [Abs] Collector-emitter voltage (Q1) (V CEO) | 50 V |
| [Abs] Collector-emitter voltage (Q2) (V CEO) | 50 V |
| [Elec] Collector Emitter Saturation Voltage (Q1) (Max) (V CE(sat)) | 0.25 V |
| [Elec] Collector Emitter Saturation Voltage (Q2) (Max) (V CE(sat)) | 0.25 V |
| Характеристики по постоянному и переменному току | |
| [Elec] DC Current Gain hFE (Q1) (Max) (h FE) | 400 - |
| [Elec] DC Current Gain hFE (Q1) (Min) (h FE) | 120 - |
| [Elec] DC Current Gain hFE (Q2) (Max) (h FE) | 400 - |
| [Elec] DC Current Gain hFE (Q2) (Min) (h FE) | 120 - |
| [Elec] Transition frequency (Q1) (Min) (f T) | 80 MHz |
| [Elec] Transition frequency (Q2) (Min) (f T) | 80 MHz |
| Условия эксплуатации и корпус | |
| [Desc] RoHS Compatible Product(s) (#) | Available |
| Другое | |
| [Desc] Application Scope | General-purpose |
| [Desc] Comments | Rank is specified by hFE range. |
| [Desc] Internal Connection | Independent |
| [Desc] Polarity | NPN + NPN |
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DatasheetDatasheet · 376.4 KB · 2026-09-23Catalog & SelectionCatalog & Selection · 8.7 MB · 2026-09-23Application NoteApplication Note · 804.7 KB · 2026-09-23Application NoteApplication Note · 637.1 KB · 2026-09-23Application NoteApplication Note · 556.0 KB · 2026-09-23Application NoteApplication Note · 542.7 KB · 2026-09-23Application NoteApplication Note · 533.0 KB · 2026-09-23
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