Rohm SemiconductorЯпония
-60V 14.5A, Dual Pch+Pch, HSOP8, Power MOSFET
Все аналоги
Полный отчётТехнические параметры
| Питание | |
|---|---|
| Drain Current I D [A] | 14.5 |
| Drain-Source Voltage V DSS [V] | -60 |
| Drive Voltage[V] | -4.5 |
| Power Dissipation (PD)[W] | 21 |
| Условия эксплуатации и корпус | |
| Mounting Style | Surface mount |
| Package Code | HSOP8 |
| Package Size [mm] | 6.0x4.9 (t=1.1) |
| Storage Temperature (Max)[℃] | 150 |
| Storage Temperature (Min)[℃] | -55 |
| Другое | |
| Number of terminal | 8 |
| Polarity | Pch+Pch |
| R DS(on) [Ω] V GS =10V(Typ) | 0.068 |
| R DS(on) [Ω] V GS =4.5V(Typ) | 0.075 |
| R DS(on) [Ω] V GS =Drive (Typ) | 0.075 |
| Total gate charge Q g [nC] | 8.5 |
| trr (Typ.)[ns] | 26 |