Infineon TechnologiesГермания
IPAN60R180CM8 is an industrialN-channel power MOSFET, 600 V VDS, 180 mOhm RDS(on), 19 A ID. Find documents, product parameters, and ordering information on the page.
Все аналоги
Полный отчётТехнические параметры
Основные параметры
Пороговое напряжение4.2 VМакс.
| Условия эксплуатации и корпус | |
|---|---|
| Mounting | THT |
| Operating Temperature range | -55 °C to 150 °C |
| Package | TO220 FullPAK narrow leads |
| Другое | |
| ID (@25°C) max | 19 A |
| IDpuls max | 48 A |
| Polarity | N |
| QG | 17 nC |
| QG (typ @10V) | 17 nC |
| RDS (on) (@10V) max | 180 mΩ |
| RDS (on) (@ Tj = 25°C) max | 180 mΩ |
| Special Features | Best price-performance with highest efficiency and fast recovery diode |
| VDS max | 600 V |
| VGS(th) | 4.2 V |
| VGS(th) range | 3.7 V to 4.7 V |