P-CHANNEL POWER MOSFET
Все аналоги
Полный отчётТехнические параметры
| Питание | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta), 3A (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 1.4W (Ta) |
| Условия эксплуатации и корпус | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Другое | |
| FET Feature | Standard |
| FET Type | N and P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF, 440pF @ 15V |
| Mfr | International Rectifier |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
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