Infineon TechnologiesГермания
MOSFET 2P-CH 30V 2.3A 8-SOIC
Все аналоги
Полный отчётВ базе аналогов: 1. Войдите, чтобы посмотреть.
Технические параметры
| Питание | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 2W |
| Условия эксплуатации и корпус | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Другое | |
| FET Feature | Logic Level Gate |
| FET Type | 2 P-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1A, 10V |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 1V @ 250µA |