GMT(致新)Китай
The M2105 is a high frequency, synchronous rectified, single phase dual MOSFET driver. Each of the drivers is capable of driving a 3000pF load with fast rising/falling time and fast propagation delay. This device implements bootstrap diode on the upper gate with only a single external capacitor. This reduced implementation complexity and allows the use of higer performance, cost effective, N-MOSFETs. Adaptive shoot through protection is integrate..
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Полный отчётТехнические параметры
| Note | HB Pre Gate Driver, Tri-State PWM Input,EN, PWM, UVLO, STP, OTP, ADJ Deadtime |
| 参数1 | 4.5 |
| 参数2 | 22 |
| 参数3 | 24 |
| 参数4 | 2A |
| 参数5 | 1.4 |
| 参数6 | 2A |
| 参数7 | 1.4 |