PM-MOSFET-SIC-SBD~-D3
Все аналоги
Полный отчётТехнические параметры
| Питание | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 495A (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Power - Max | 2.031kW (Tc) |
| Условия эксплуатации и корпус | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C~175°C(TJ) |
| Package | Box |
| Package / Case | Module |
| Supplier Device Package | D3 |
| Другое | |
| Base Product Number | MSCSM120 |
| FET Feature | Silicon Carbide (SiC) |
| FET Type | 2 N Channel (Phase Leg) |
| Gate Charge (Qg) (Max) @ Vgs | 1392nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 18.1pF @ 1000V |
| Mfr | Microchip Technology |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 240A, 20V |
| Series | - |
| Vgs(th) (Max) @ Id | 2.8V @ 6mA |
Документы
К этому компоненту пока не привязаны документы.