The QPD0010 is an asymmetric dual-path discrete GaN on SiC HEMT in a DFN package which operates from 2.5 to 2.7 GHz. In each path is a single-stage amplifier transistor. QPD0010 can deliver an average power of 15 W in a Doherty configuration. Lead free and RoHS compliant. Typical Applications WCDMA / LTE Macrocell Base Station Microcell Base Station Small Cell Active Antenna 5G Massive MIMO Asymmetric Doherty Applications Product Categories Products> Discrete Transistors> GaN HEMTs Application Categories Applications> Defense & Aerospace> Communications Applications> Network Infrastructure> Wireless Infrastructure> Base Stations Applications> Network Infrastructure> Wireless Infrastructure> Small Cells Applications> Network Infrastructure> Wireless Infrastructure> 5G
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Полный отчётТехнические параметры
| Характеристики по постоянному и переменному току | |
|---|---|
| Frequency Max(MHz) | 2,700 |
| Frequency Min(MHz) | 2,500 |
| Gain(dB) | 15 |
| Условия эксплуатации и корпус | |
| Halogen Free | Yes |
| Package(mm) | 7.0 x 6.5 |
| Package Type | DFN |
| RoHS | Yes |
| Другое | |
| Drain Efficiency(%) | 55 |
| ECCN | EAR99 |
| Idq(mA) | 65 |
| ITAR Restricted | No |
| Lead Free | Yes |
| Psat(dBm) | 50.5 |
| Vd(V) | 48 |