Rohm SemiconductorЯпония
1200V, 30A, 3-pin THD, Silicon-carbide (SiC) SBD
Все аналоги
Полный отчётТехнические параметры
| Питание | |
|---|---|
| Continuous Forward Current[A] | 30 |
| Reverse Voltage[V] | 1200 |
| Total Power Dissipation[W] | 328 |
| Условия эксплуатации и корпус | |
| Grade | Standard |
| Junction Temperature(Max.)[°C] | 175 |
| Package Size [mm] | 21.0x16.0 (t=5.2) |
| Storage Temperature (Max.)[°C] | 175 |
| Storage Temperature (Min.)[°C] | -40 |
| Другое | |
| Generation | 3rd Gen |