VBsemi(微碧半导体)Китай

VBGL1602 is a Single N-type MOSFET with a nominal drain-source voltage (VDS) of 60V, a nominal gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. At VGS=10V The drain-source resistance is 2.1mΩ. The maximum drain current (ID) is 190A. The package form is TO263. VBGL1602 is suitable for power modules, electric vehicle battery management systems, solar inverters and other fields. It can be used in power switches, power management, energy conversion and other modules to achieve stable energy conversion and high-performance output.