VBsemi(微碧半导体)Китай
Product introduction: VBMB16R01 is a Single N-type MOSFET produced by VBsemi, manufactured using Plannar technology. The device has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its package is TO220F.
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Полный отчётТехнические параметры
| Условия эксплуатации и корпус | |
|---|---|
| VB Package | TO220F |
| Другое | |
| Configuration | Single-N |
| ID(A) | 1A |
| Rds10 | 6500 (mΩ) |
| Technology | Plannar |
| VDS(V) | 600V |
| VGS | 30（±V） |
| Vthyp（V） | 3.5V |