Результаты поиска:CD3A20
Найдено: 4- С даташитом3
- Производителей1
Результаты поискаВсего: 4
| Сравнить | Партномер | Производитель | Категория | Описание | Документы | Аналоги |
|---|---|---|---|---|---|---|
| Diodes - Rectifiers - Single | DIODE SCHOTTKY 20V 3A DIE | Даташит1 | ||||
| Single Diodes | DIODE SCHOTTKY 20V 3A DIE | Даташит1 | ||||
| SCRs - Modules | <p>CD3A20-40, CD5820-22, and JHC, JKC 5822 Schottky Rectifiers, have 3A average rectifier current (Io), with working peak reverse voltages (Vf) from 20V-40V, available in Die form. The JANHCA1N5822 and JANKCA1N5822 are screened to MIL-PRF-19500/620 specification. Silicon Dioxide passivation, compatible with all wire bonding and die attached techniques, with exception of solder reflow. Maximum forward voltage (Vf) of 0.55V at 3 Amps and maximum reverse leakage current (Ir) of 0.10 mA at 25 Celsius and 12.5mA at 100 Celsius. Die size is 64 square Mils cathode, with 53 square Mils anode.</p> | |||||
| SCRs - Modules | <p>This 3A Schottky barrier diode family is metallurgically bonded and offers military grade qualifications for high-reliability applications on “1N” prefixed numbers (1N5822 and 1N6864), as well as "CDLL" and "DSB" prefixed numbers for packaged COTs components, "CD" prefixed COTs die , "CDS" prefixed for JANS grade components and "MNS" prefixed for Microchip New Space. This small diode is hermetically sealed with four levels of product assurance JAN, JANTX, JANTXV, JANS, for the military grade encapsulated devices, as specified in MIL-PRF-19500/620 and two levels of product assurance provided for each unencapsulated device type, JANHC, AND JANKC. The device package outlines for the encapsulated devices are as follows: Axial leaded B package and B MELF square end-cap surface mount version (US suffix). The average rectifier output current (Io) for this family is 3 Amps, with working peak reverse voltages (Vrwm) of 20V to 80V, maximum forward voltages (Vf) of 0.5V to 0.7V and maximum reverse leakage currents (Ir) of 0.10 mA to 0.15mA at 25 Celsius and 12.5mA at 100 degrees Celsius.</p> | Даташит1 |
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