Результаты поиска:PWH2H12-R47N0T

The PWH2H12-R47N0T supports very aggressive transient loads and high ripple current without excessive heating, enabling high performance PMIC rails and compact VRM stages. The molded shielding structure suppresses EMI coupling in dense layouts, while the metal composite core provides outstanding saturation current capability and controlled inductance behavior under DC bias. It is ideal for smartphone SoC rails, AI edge modules, battery-powered power systems, and high density embedded electronics.