BL(上海贝岭)Китай
BLP075N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications.
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Полный отчётТехнические параметры
| Условия эксплуатации и корпус | |
|---|---|
| Package | TO220 TO263 |
| Другое | |
| ID(Max.) | 72A |
| Mode | N-Channel |
| Qg(Typ) | 54nC |
| RDS(on)(Max.) | 7.5mΩ |
| Type | SGT MOSFETs |
| VDS(Max.) | 100V |