BL(上海贝岭)Китай
BLP13N10L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅱ technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications.
Все аналоги
Полный отчётТехнические параметры
| Условия эксплуатации и корпус | |
|---|---|
| Package | PDFN3.3X3.3 |
| Другое | |
| ID(Max.) | 34A |
| Qg(Typ) | 32nC |
| RDS(on)(Max.) | 15mΩ |
| Type | SGT MOSFETs |
| VDS(Max.) | 100V |