BL(上海贝岭)Китай
BLS60R520, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose appl
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Полный отчётТехнические параметры
| Условия эксплуатации и корпус | |
|---|---|
| Package | TO220 TO220F TO251 TO252 |
| Другое | |
| ID(Max.) | 8A |
| Mode | N-Channel |
| Qg(Typ) | 16nC |
| RDS(on)(Max.) | 520mΩ |
| Type | SJ MOSFETs |
| VDS(Max.) | 600V |